inchange semiconductor product specification silicon npn power transistors MJF18004 description ? ? with to-220f package ? high voltage ,high speed applications ? designed for use in 220v line-operated switchmode power supplies and electronic light ballasts pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 5 a i cm collector current-peak 10 a i b base current 2 a i bm base current-peak 4 a p d total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 3.12 ??/w r th j-a thermal resistance junction to ambient 62.5 ??/w fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors MJF18004 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; l=25mh 450 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.1a t c =125 ?? 0.5 0.6 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.4a t c =125 ?? 0.45 0.8 v v cesat-3 collector-emitter saturation voltage i c =2.5a ;i b =0.5a 0.75 v v besat-1 base-emitter saturation voltage i c =1a ;i b =0.1a 1.1 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.4a 1.25 v v besat-3 base-emitter saturation voltage i c =2.5a ;i b =0.5a 1.3 v 0.1 v ces =ratedv ces; v eb =0 0.5 i ces collector cut-off current v ces =800v t c =125 ?? 0.1 ma i ceo collector cut-off current v ce =ratedv ceo ; i b =0 0.1 ma i ebo emitter cut-off current v eb =9v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =2.5v 12 h fe-2 dc current gain i c =1a ; v ce =5v 14 36 h fe-3 dc current gain i c =2a ; v ce =1v 6 h fe-4 dc current gain i c =5ma ; v ce =5v 10 f t transition frequency i c =0.5a ; v ce =10v;f=1.0mhz 13 mhz c ob collector outoput capacitance i e =0 ; v cb =10v;f=1.0mhz 45 pf switching times resistive load,duty cycle ? 10%,pulse width=20 | s t on turn-on time 0.6 | s t s storage time 3.0 | s t f fall time v cc =250v ,i c =2.5a i b1 =0.5a; i b2 =0.5a 0.4 | s
inchange semiconductor product specification 3 silicon npn power transistors MJF18004 package outline fig.2 outline dimensions
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